NONVOLATILE STORAGE DEVICE

摘要

Provided is a nonvolatile storage device characterized by being provided with a storage unit comprising a first insulating layer (10), a second insulating layer (20) which is formed in contact with the first insulating layer (10) after the first insulating layer (10) is formed and differs from the first insulating layer (10) in at least either composition or phase state, and a pair of electrodes (41, 42) in a boundary portion (15) between the first insulating layer (10) and the second insulating layer (20), which enables the passage of an electric current along the boundary portion (15), wherein the electric resistance of a current path (16) through which the electric current is passed changes by the voltage applied between the pair of electrodes.  Thus, the resistance change nonvolatile storage device with a stable characteristic in which the position and shape of the current path are precisely controlled can be provided.