| 摘要 |
<p>The device (KA) for producing an ingot made of multicrystalline silicon after a vertical-gradient-freeze-process, comprises a crucible (T) for filling with pieced or granulated silicon, and a heating device (H) for heating the crucible to cool the filled silicon melted and controlled to an ingot. The device is equipped with a separate heating unit (L) aligned on the surface of the silicon, where the heating unit is activated during failure of the heating device appeared during cooling the silicon. The heating unit is formed as a focused energy source. The device (KA) for producing an ingot made of multicrystalline silicon after a vertical-gradient-freeze-process, comprises a crucible (T) for filling with pieced or granulated silicon, and a heating device (H) for heating the crucible to cool the filled silicon melted and controlled to an ingot. The device is equipped with a separate heating unit (L) aligned on the surface of the silicon, where the heating unit is activated during failure of the heating device appeared during cooling the silicon. The heating unit is formed as a focused energy source, which emits an energy beam on a partial area of the surface of the silicon. The focused energy source is formed as laser operated in a wavelength range of 800-1000 nm. The heating unit is operated by a power supply (USV). The heating device is an electrical heating device, which is operated by a heating power supply. The power supply of the separate heating unit is separately arranged. The device has a control switch, which activates the power supply for operating the separate heating unit during the failure of the heating power supply and/or the heating device. The power supply of the heating unit is a power supply equipped with a battery. The heating device is formed with sheathed heater, overhead heater or bottom heater or only sheathed heater, only overhead heater or only bottom heater An independent claim is included for a method for producing an ingot made of multicrystalline silicon.</p> |
