发明名称 |
DEPOSITION METHOD USING ATOMIC LAYER DEPOSITION METHOD, AND DEPOSITION DEVICE THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a deposition method in which faults in directly injecting water which is an oxidizing agent by an injection valve are eliminated, and to provide a deposition device thereof. SOLUTION: The deposition method includes: an adsorbing process of adsorbing an organic metal compound to the surface of a substrate by holding a substrate W inside, directly injecting a liquid raw material containing the organic metal compound into a deposition chamber 2 which is decompressed by a pump 71 by an injection valve 41, and vaporizing the liquid raw material by a decompression boiling phenomenon; and an oxidizing process for oxidizing the organic metal compound which is adsorbed onto the surface of the substrate by directly injecting a mixed solution of water which is the oxidizing agent and an organic solvent with smaller latent heat of vaporization than that of water into the deposition chamber 2 by the injection valve 51 and vaporizing the mixed solution by the decompression boiling phenomenon. COPYRIGHT: (C)2011,JPO&INPIT
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申请公布号 |
JP2011023596(A) |
申请公布日期 |
2011.02.03 |
申请号 |
JP20090168041 |
申请日期 |
2009.07.16 |
申请人 |
DOSHISHA;HORIBA LTD;HORIBA STEC CO LTD |
发明人 |
SENDA JIRO;TOMINAGA KOJI;TERASAKA MASAKUNI;YAMAGISHI YUTAKA;SHIMIZU TETSUO |
分类号 |
H01L21/316;C23C16/448;C23C16/455;H01L21/31 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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