发明名称 DEPOSITION METHOD USING ATOMIC LAYER DEPOSITION METHOD, AND DEPOSITION DEVICE THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a deposition method in which faults in directly injecting water which is an oxidizing agent by an injection valve are eliminated, and to provide a deposition device thereof. SOLUTION: The deposition method includes: an adsorbing process of adsorbing an organic metal compound to the surface of a substrate by holding a substrate W inside, directly injecting a liquid raw material containing the organic metal compound into a deposition chamber 2 which is decompressed by a pump 71 by an injection valve 41, and vaporizing the liquid raw material by a decompression boiling phenomenon; and an oxidizing process for oxidizing the organic metal compound which is adsorbed onto the surface of the substrate by directly injecting a mixed solution of water which is the oxidizing agent and an organic solvent with smaller latent heat of vaporization than that of water into the deposition chamber 2 by the injection valve 51 and vaporizing the mixed solution by the decompression boiling phenomenon. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011023596(A) 申请公布日期 2011.02.03
申请号 JP20090168041 申请日期 2009.07.16
申请人 DOSHISHA;HORIBA LTD;HORIBA STEC CO LTD 发明人 SENDA JIRO;TOMINAGA KOJI;TERASAKA MASAKUNI;YAMAGISHI YUTAKA;SHIMIZU TETSUO
分类号 H01L21/316;C23C16/448;C23C16/455;H01L21/31 主分类号 H01L21/316
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