| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS image sensor that can be sufficiently increased in the number of pixels by making a pixel isolation region narrow, and can have high resolution by suppressing transmission of visible light incident on an adjacent pixel to the pixel isolation region. SOLUTION: The CMOS image sensor includes a semiconductor substrate of a first conductivity type, a photodiode formed on the semiconductor substrate of the first conductivity type and converting incident light into a carrier, a pixel region of a second conductivity type different from the first conductivity type, the element isolation region of the first conductivity type which is formed surrounding the pixel region together with the semiconductor substrate, a cavity formed in the element isolation region, and a gate electrode formed on the element isolation region. COPYRIGHT: (C)2011,JPO&INPIT
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