| 摘要 |
PROBLEM TO BE SOLVED: To provide a standard sample for a scanning probe microscope and a carrier concentration measurement method, capable of finding the correlations between the carrier concentrations and the local electrical characteristics (including the characteristics of spreading resistance, capacitance and nonlinear dielectric constant) more accurately than conventionally. SOLUTION: The standard sample 10 is formed by interchangeably laminating inactive layers 3 composed of silicon films grown epitaxially without adding impurities, and active layers 2A-2F, composed of silicon films grown epitaxially doping impurities on a semiconductor substrate 1 composed of monocrystalline silicon. Each active layer 2A-2F has a carrier concentration (impurity concentration) that differs from the others, respectively and is separated by inactive layers 3, whose carrier concentrations are low and the electrical resistivities are high. Consequently, correlations between the carrier concentrations and the local electric characteristics can be found accurately, while the leakage of a signal current between different active layers is suppressed. COPYRIGHT: (C)2011,JPO&INPIT
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