SOI STRUCTURE NAND ELEMENT AND NOR ELEMENT WITH SINGLE-EVENT TOLERANCE

摘要

PROBLEM TO BE SOLVED: To provide a NAND element and a NOR element which exhibit high tolerance to single event. SOLUTION: The NAND element and NOR element have a redundant structure in which a first p-channel MOS transistor and a second p-channel MOS transistor having channels that are connected in parallel, and a first n-channel MOS transistor and a second n-channel MOS transistor having channels that are connected in series are serially connected on an SOI structure substrate from a node that is connected to a first voltage source side to a node that is connected to a second voltage source side, and MOS transistors having gates that are connected to each other and channels of the same conductivity type and are further connected in series to each of the transistors in such a manner that the channels are connected in series. COPYRIGHT: (C)2011,JPO&INPIT