发明名称 |
SEMICONDUCTOR DEVICE ANALYZER AND SEMICONDUCTOR DEVICE ANALYSIS METHOD |
摘要 |
A semiconductor device analyzer comprises a function of radiating a charged particle beam on a sample and displaying a detected secondary electron image according to detected secondary electron intensity. A charged particle beam is radiated according to a first radiation pattern onto a semiconductor device that is to be analyzed, and a charge is injected. Next, a charge accumulation state of the semiconductor device that is to be analyzed is observed. A location where the charge accumulation state is abnormal can be detected as a defect location in the semiconductor device. A defect location is identified easily.
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申请公布号 |
US2011025340(A1) |
申请公布日期 |
2011.02.03 |
申请号 |
US20100842664 |
申请日期 |
2010.07.23 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
NAKAMURA TOYOKAZU;KUWABARA SUMIO |
分类号 |
G01R31/307;H01J37/28 |
主分类号 |
G01R31/307 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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