发明名称 SEMICONDUCTOR DEVICE ANALYZER AND SEMICONDUCTOR DEVICE ANALYSIS METHOD
摘要 A semiconductor device analyzer comprises a function of radiating a charged particle beam on a sample and displaying a detected secondary electron image according to detected secondary electron intensity. A charged particle beam is radiated according to a first radiation pattern onto a semiconductor device that is to be analyzed, and a charge is injected. Next, a charge accumulation state of the semiconductor device that is to be analyzed is observed. A location where the charge accumulation state is abnormal can be detected as a defect location in the semiconductor device. A defect location is identified easily.
申请公布号 US2011025340(A1) 申请公布日期 2011.02.03
申请号 US20100842664 申请日期 2010.07.23
申请人 NEC ELECTRONICS CORPORATION 发明人 NAKAMURA TOYOKAZU;KUWABARA SUMIO
分类号 G01R31/307;H01J37/28 主分类号 G01R31/307
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