| 摘要 |
The present invention relates to an apparatus and method for manufacturing a polycrystalline silicon thin film, and to an apparatus and method for manufacturing a polycrystalline silicon thin film which prevent a surface of a substrate from being fractured, improve production yields in processes, and reduce manufacturing costs. The present invention provides an apparatus for manufacturing a polycrystalline silicon thin film, comprising: a support unit on which a substrate is loaded; a first conductor and a second conductor arranged on the support unit in parallel to the direction of an supplied current; and a power supply unit arranged in the vicinity of the support unit to supply power. In addition, the present invention provides a method for manufacturing a polycrystalline silicon thin film, which involves applying power to a conductive thin film of a substrate on which an amorphous silicon thin film and the conductive thin film are formed to crystallize the amorphous silicon thin film, wherein said method comprises placing the substrate between a first conductor and a second conductor arranged on a support, and applying the voltage supplied by a power supply source to the conductive thin film and first and second conductors to crystallize the amorphous silicon thin film. |
