SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要
In a bottom-gate thin film transistor using the stack of the first oxide semiconductor layer and the second oxide semiconductor layer, an oxide insulating layer serving as a channel protective layer is formed over and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the insulating layer, an oxide insulating layer covering a peripheral portion (including a side surface) of the stack of the oxide semiconductor layers is formed.
申请公布号
WO2011013596(A1)
申请公布日期
2011.02.03
申请号
WO2010JP62484
申请日期
2010.07.20
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;YAMAZAKI, SHUNPEI;AKIMOTO, KENGO;TSUBUKU, MASASHI;SASAKI, TOSHINARI;KUWABARA, HIDEAKI