| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing liquid and a polishing method which maintain fine polishing speed for a barrier metal of a barrier layer and achieve high polishing speed for a silicon dioxide making up a cap layer and low-polishing speed for a low-k film. <P>SOLUTION: The polishing liquid for CMP contains abrasive grains, a metal oxide solubilizer, an oxidizing agent, water and a class-4 phosphonium salt. The abrasive grains have a positive zeta potential in the polishing liquid, and the class-4 phosphonium salt has an alkyl triphenyl phosphonium salt structure. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
