| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory device capable of increasing the capacity. SOLUTION: The magnetic memory device includes an active area 11 formed in a first direction; an MTJ element 12, formed on the active area 11 and storing data by a change in the resistance value; and a gate electrode (word line WL) of cell transistors T1 and T2, formed on the active area 11 on both sides of the MTJ element 12 in a second direction orthogonal to the first direction. It further includes a bit line contact 13 formed on the active area 11 opposite to the MTJ element 12 of the gate electrode; a bit line BL, connected to the MTJ element 12 and formed in the first direction; and a bit line bBL connected with the bit line contact 13 and formed in the first direction. The MTJ element 12 and the bit line contact 13 are disposed alternately sandwiching the gate electrode. COPYRIGHT: (C)2011,JPO&INPIT |
