| 摘要 |
Provided is a method for forming a buried word line in a semiconductor device. The method includes forming a trench by etching a pad layer and a substrate, forming a conductive layer to fill the trench, planarizing the conductive layer until the pad layer is exposed, performing an etch-back process on the planarized conductive layer, and performing an annealing process in an atmosphere of a nitride-based gas after at least one of the forming of the conductive layer, the planarizing of the conductive layer, and the performing of the etch-back process on the planarized conductive layer.
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