| 摘要 |
A photoresist composition contains a polyol compound and a vinyl ether compound, which polyol compound having an aliphatic group and an aromatic group bound alternately, and which aromatic group has an aromatic ring and two or more hydroxyl groups on the aromatic ring. The polyol compound can be prepared, for example, through an acid-catalyzed reaction, such as a Friedel-Crafts reaction, between an aliphatic polyol and an aromatic polyol. The aliphatic polyol is preferably an alicyclic polyol, whereas the aromatic polyol is preferably hydroquinone. The photoresist composition gives a resist film showing excellent alkali solubility and high etching resistance and thereby gives a resist pattern with less LER and less pattern collapse.
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