发明名称 WIRE AND SOLDER BOND FORMING METHODS
摘要 <p>Methods of forming wire and solder bond structures are disclosed. In one embodiment, a method includes providing a structure including a wire bond metal region for the wire bond and a solder bond metal region for the solder bond; forming a protective layer over the wire bond metal region only; forming a silicon nitride layer over a silicon oxide layer over the wire bond metal region and the solder bond metal region; forming the solder bond to the solder bond metal region while maintaining the wire bond metal region covered; exposing the wire bond metal region including removing the protective layer; and forming the wire bond to the wire bond metal region. Wire bond and solder bond structures can be made accessible on a single multi-part wafer (MPW) wafer or on a single chip, if necessary.</p>
申请公布号 EP2097202(B1) 申请公布日期 2011.02.02
申请号 EP20070822113 申请日期 2007.10.31
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 DAUBENSPECK, TIMOTHY HARRISON;SAUTER, WOLFGANG;GAMBINO, JEFFREY PETER;MUZZY, CHRISTOPHER DAVID
分类号 B23K1/20;B23K20/24;H01L25/065 主分类号 B23K1/20
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