Semiconductor device having surface regions with different crystal orientation and manufacturing method

摘要

Disclosed are a semiconductor device and a method for manufacturing a semiconductor device, particularly a CMOS device, that includes selectively formed, high quality single crystal or monocrystalline surface regions exhibiting different crystal orientations. At least one of the surface regions will incorporate at least one faceted epitaxial semiconductor structure having surfaces that exhibit a crystal orientation different than the semiconductor region on which the faceted epitaxial semiconductor structure is formed. Accordingly, the crystal orientation in the channel regions of the NMOS and/or PMOS devices may be configured to improve the relative performance of at least one of the devices and allow corresponding redesign of the semiconductor devices fabricated using such a process.