| 摘要 |
A semiconductor memory cell, or a semiconductor memory cell for ASICs, of the structure is provided which ensures stable transistor operation, which does not require a large-capacitance capacitor as required in conventional DRAMs, which ensures reliable reading and writing of information, that permits short-channel design, and that allows the cell area to be reduced. The semiconductor memory cell includes: an information storage transistor TR1 comprising a semiconductor channel layer Ch1, first and second conductive gates G1, G2, and first and second conductive layers L1, L2; and a switching transistor TR2 comprising a semiconductor channel forming region Ch2, a third conductive gate G3, and third and fourth conductive layers L3, L4, wherein the fourth conductive layer L4 is connected to the second conductive gate G2, the first conductive gate G1 and the third conductive gate G3 are connected to a first memory-cell-selection line, the first conductive layer L1 and the third conductive layer L3 are connected to a second memory-cell-selection line, the second conductive layer L2 is connected to a fixed potential, and the semiconductor channel forming region Ch2 is connected to a read/write selection line.
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