| 摘要 |
Si3N4 having high humidity resistance is used as a surface protecting insulating film (12) covering a metal layer (9). At a bonding pad portion (21) where metal layer (9) is directly exposed, coverage is provided by anti-corrosion metal portion consisting of a titanium-tungsten alloy layer (13) and gold layers (14a, 14b). At a signal processing circuit portion (23), light intercepting structure and interconnection are provided similarly by titanium-tungsten alloy layer (13) and gold layer (14). Thus humidity resistance of a photodetector element containing a circuit element is improved, and the gold layer (14) allows direct die-bonding of a laser chip or the like. Further, since light intercepting structure and interconnection can be provided at the signal processing circuit portion (23) simultaneously with the formation of gold layer (14) for the bonding pad portion (21), the number of manufacturing steps can be reduced. <IMAGE>
|
