发明名称 METHOD FOR FORMING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method is provided to prevent the generation of the defect of a repair fuse by forming a protective layer which covers the entire surface of a metal fuse which is exposed due to a fuse box. CONSTITUTION: A fuse part, which includes a plurality of metal fuses(32) and fuse box(34), is formed. The fuse box exposes a part of the metal fuses. The metal fuse to be repaired is cut by executing a repair process. A protective layer(35) is formed in order to cover the entire surface of the metal fuse that is exposed due to the fuse box. The protective layer is formed by executing a deionized rinsing process.
申请公布号 KR20110010399(A) 申请公布日期 2011.02.01
申请号 KR20090067947 申请日期 2009.07.24
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YIN, SUNG WOOK
分类号 H01L23/62 主分类号 H01L23/62
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