| 摘要 |
A process may include first etching a trench isolation dielectric through a dielectric hard mask that abuts the sidewall of a fin semiconductor. The first etch can be carried out to expose at least a portion of the sidewall, causing the dielectric hard mask to recede to a greater degree in the lateral direction than the vertical direction. The process may include second etching the fin semiconductor to achieve a thinned semiconductor fin, which has receded beneath the shadow of the laterally receded hard mask. The thinned semiconductor fin may have a characteristic dimension that can exceed photolithography limits. Electronic devices may include the thinned semiconductor fin as part of a field effect transistor.
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