| 摘要 |
A method for manufacturing a semiconductor device includes the consecutive steps of selectively implanting first-conductivity-type impurities into a silicon substrate in a memory cell array area to form first source/drain regions, heat treating to diffuse the impurities in the first source/din regions; selectively implanting impurities into the silicon substrate in a peripheral circuit area to form second source/drain regions in the peripheral circuit area.
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