发明名称 |
Method of manufacturing a semiconductor device including a semiconductor substrate with stripes of different crystal plane directions |
摘要 |
Manufacturing a semiconductor device with higher operating characteristics and achieve low power consumption of a semiconductor integrated circuit. A single crystal semiconductor layer is formed so that crystal plane directions of single crystal semiconductor layers which are used for channel regions of an n-channel TFT and a p-channel TFT and which are formed over the same plane of the substrate are the most appropriate crystal plane directions for each TFT. In accordance with such a structure, mobility of carrier flowing through a channel is increased and the semiconductor device with higher operating characteristics can be provided. Low voltage driving can be performed, and low power consumption can be achieved.
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申请公布号 |
US7879689(B2) |
申请公布日期 |
2011.02.01 |
申请号 |
US20080273010 |
申请日期 |
2008.11.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MORIWAKA TOMOAKI |
分类号 |
H01L21/301;H01L21/461;H01L21/84;H01L27/12 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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