| 摘要 |
PURPOSE: A method for forming a semiconductor device including a metal contact is provided to improve the property of a semiconductor device by preventing the increase of a contact resistor. CONSTITUTION: A first interlayer insulation layer is formed on the upper side of a metal wiring(102). An etch stop layer is formed on the upper side of the first interlayer insulation layer. A second interlayer insulation layer is formed on the upper side of the etch stop layer. An barrier insulation layer(116) with a first contact hole is formed on the sidewall of the second interlayer insulation layer. A second contact hole is formed by etching the first interlayer insulation layer to expose the metal wiring. A metal contact(124) fills the first and second contact holes.
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