发明名称 |
VCSEL, manufacturing method thereof, optical device, light irradiation device, data processing device, light sending device, optical spatial transmission device, and optical transmission system |
摘要 |
A VCSEL includes a first conductivity-type first semiconductor mirror layer on a substrate, an active region thereon, a second conductivity-type second semiconductor mirror layer thereon, and a current confining layer in proximity to the active region. A mesa structure is formed such that at least a side surface of the current confining layer is exposed. The current confining layer includes a first semiconductor layer having an Al-composition and a second semiconductor layer having an Al-composition and being formed nearer to the active region than the first semiconductor layer does. Al concentration of the first semiconductor layer is higher than that of the second semiconductor layer. When oscillation wavelength of laser light isλ, optical thickness being sum of the thickness of the first and second semiconductor layers isλ/4. The first and second semiconductor layers are selectively oxidized from the side surface of the mesa structure.
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申请公布号 |
US7881354(B2) |
申请公布日期 |
2011.02.01 |
申请号 |
US20070880494 |
申请日期 |
2007.07.23 |
申请人 |
FUJI XEROX CO., LTD. |
发明人 |
YOSHIKAWA MASAHIRO;YAMAMOTO MASATERU;KONDO TAKASHI |
分类号 |
H01S5/00;H01S5/187 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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