| 摘要 |
<p>PURPOSE: An optical proximity effect removal method is provided to improve an exposure process margin by removing a pattern due to a scattering bar remaining in a wafer. CONSTITUTION: A first exposure process is executed by using a first photomask(100) on a wafer. The first photomask comprises a main pattern(101,102,103) and a scattering bar. A second exposure process is executed by using a second photomask containing the main pattern. The exposed scattering bar pattern is removed by executing a developing process.</p> |
