发明名称 |
Modeling silicon-on-insulator stress effects |
摘要 |
A method and system for modeling silicon-on-insulator shallow trench isolation stress effect is described. The method includes creating instance parameters that define dimensions of a body-tie enclosure of gate and gate-end. The instance parameters are added to a netlist. The netlist and a lookup table are used to generate a mobility multiplier. The mobility multiplier is added to the netlist and a circuit simulation program runs the netlist having the instance parameters and the mobility multiplier.
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申请公布号 |
US7882452(B2) |
申请公布日期 |
2011.02.01 |
申请号 |
US20070847999 |
申请日期 |
2007.08.30 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
VOGT ERIC E.;MICHAELSON GREG A. |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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