FABRICATION METHOD OF SOI(SILICON ON INSULATOR) WAFER

摘要

PURPOSE: A method for manufacturing an SOI(Silicon On Insulator) is provided to control the area of a device forming area of a device wafer by controlling the area of a terrace. CONSTITUTION: A handling wafer(100) is prepared. A device wafer(200) is prepared. An oxide layer(108) is formed on a handling wafer and a device wafer. The device wafer with the terrace on the edge is returned and is boned on the handling wafer. The surface of the device water is polished.