| 摘要 |
PURPOSE: A chemical vapor deposition device is provided to reduce a defect ratio by spraying processing gas in a different location. CONSTITUTION: A susceptor(20) is installed inside a processing chamber(10) and stores a wafer. A first gas supply unit is installed in the upper side of the susceptor and sprays first processing gas in the direction of the susceptor. A second gas supply unit(200) is rotatably installed in the lower side of the first gas supply unit. The second gas supply unit comprises a plurality of nozzles. The second gas supply unit revolves at high speed and sprays second processing gas.
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