发明名称 Quantum device, control method thereof and manufacturing method thereof
摘要 A quantum dot (22) is formed on a GaAs substrate (20). In the quantum dot (22), a single electron exists. A cap layer (26) is formed on a surrounding area of the quantum dot (22), and a barrier layer (28) is formed thereon. A quantum dot (30) for detection is formed on the barrier layer (28). Then, a cap layer (34) covering the quantum dot (30) and the like is formed.
申请公布号 US7880162(B2) 申请公布日期 2011.02.01
申请号 US20070898116 申请日期 2007.09.10
申请人 FUJITSU LIMITED 发明人 SONG HAIZHI
分类号 H01L29/06;H01L31/00 主分类号 H01L29/06
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