发明名称 Method for QCRIT measurement in bulk CMOS using a switched capacitor circuit
摘要 A test setup for estimating the critical charge of a circuit under test (CUT) uses a charge injection circuit having a switched capacitor that is selectively connected to a node of the CUT. A voltage measurement circuit measures the voltage at a tap in the charge injection circuit before and after the charge is injected. When the injected charge causes an upset in the logical state of the CUT, the critical charge is calculated as the product of the voltage difference and the known capacitance of the capacitor. In one embodiment, (NMOS drain strike simulation) the amount of charge injected is controlled by a variable pulse width generator gating the switch of the charge injection circuit. In another embodiment (PMOS drain strike simulation) the amount of charge injected is controlled by a variable voltage supply selectively connected to the charge storage node.
申请公布号 US7881135(B2) 申请公布日期 2011.02.01
申请号 US20070679406 申请日期 2007.02.27
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CANNON ETHAN H.;DRAKE ALAN J.;GEBARA FADI H.;KEANE JOHN P.;KLEINOSOWSKI AJ
分类号 G11C29/00 主分类号 G11C29/00
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