发明名称 Current sensing circuit and semiconductor memory device including the same
摘要 To provide a current sensing circuit that detects a difference between a cell current and a reference current. The current sensing circuit includes: current mirror circuits of which the input terminal is connected with a reference current source; a differential amplifier of which the one input terminal is supplied with a potential of an electrical connection point between an output terminal of the current mirror circuit and a memory cell and of which the other input terminal is supplied with a reference potential; and an equalizing circuit that short-circuits the both input terminals of the differential amplifier in response to an equalizing signal. Thereby, the both input terminals can be kept at the same potential immediately before a sensing operation starts, and thus, even when the cell current is weak, a highly sensitive sensing operation can be performed at high speed.
申请公布号 US7881119(B2) 申请公布日期 2011.02.01
申请号 US20090385958 申请日期 2009.04.24
申请人 ELPIDA MEMORY, INC. 发明人 FUKUSHIMA NOBUYUKI
分类号 G11C16/06 主分类号 G11C16/06
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