| 发明名称 |
Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection |
| 摘要 |
The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge.
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| 申请公布号 |
US7879250(B2) |
申请公布日期 |
2011.02.01 |
| 申请号 |
US20070899613 |
申请日期 |
2007.09.05 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KATZ DAN;PALAGASHVILI DAVID;WILLWERTH MICHAEL D.;TODOROW VALENTIN N.;PATERSON ALEXANDER M. |
| 分类号 |
B44C1/22;C03C15/00;C03C25/68;C23F1/00 |
主分类号 |
B44C1/22 |
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