发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
A plasma nitriding process is followed by a selective etching process which removes a silicon oxynitride film formed on surfaces of both an element separation film and an insulation film while leaving a silicon nitride film formed on an electrode layer. The selective etching process removes the silicon oxynitride film formed on the surfaces of the element separation film and the insulation film. |
申请公布号 |
KR20110010628(A) |
申请公布日期 |
2011.02.01 |
申请号 |
KR20107027573 |
申请日期 |
2009.05.01 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HIROTA YOSHIHIRO;SATO YOSHIHIRO;OKUMURA NOBUO |
分类号 |
H01L21/8247;H01L21/318;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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