发明名称 |
Minimizing degradation of SiC bipolar semiconductor devices |
摘要 |
A bipolar device has at least one p− type layer of single crystal silicon carbide and at least one n− type layer of single crystal silicon carbide, wherein those portions of those stacking faults that grow under forward operation are segregated from at least one of the interfaces between the active region and the remainder of the device.
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申请公布号 |
US7880171(B2) |
申请公布日期 |
2011.02.01 |
申请号 |
US20040022520 |
申请日期 |
2004.12.22 |
申请人 |
CREE, INC. |
发明人 |
SUMAKERIS JOSEPH J.;SINGH RANBIR;PAISLEY MICHAEL JAMES;MUELLER STEPHAN GEORG;HOBGOOD HUDSON M.;CARTER, JR. CALVIN H.;BURK, JR. ALBERT AUGUSTUS |
分类号 |
H01L31/0312;H01L29/24;H01L29/732;H01L29/744;H01L29/861 |
主分类号 |
H01L31/0312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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