发明名称 Method of forming a wiring having carbon nanotube
摘要 In a method of forming a wiring having a carbon nanotube, a lower wiring is formed on a substrate, and a catalyst layer is formed on the lower wiring. An insulating interlayer is formed on the substrate to cover the catalyst layer, and an opening is formed through the insulating interlayer to expose an upper face of the catalyst layer. A carbon nanotube wiring is formed in the opening, and an upper wiring is formed on the carbon nanotube wiring and the insulating interlayer to be electrically connected to the carbon nanotube wiring. A thermal stress is generated between the carbon nanotube wiring and the upper wiring to produce a dielectric breakdown of a native oxide layer formed on a surface of the carbon nanotube wiring. A wiring having a reduced electrical resistance between the carbon nanotube wiring and the upper wiring may be obtained.
申请公布号 US7877865(B2) 申请公布日期 2011.02.01
申请号 US20090387299 申请日期 2009.04.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE SUN-WOO;MOON SEONG-HO;KIM DONG-WOO;KIM JUNG-HYEON;YOON HONG-SIK
分类号 H01R43/00;H01L21/44 主分类号 H01R43/00
代理机构 代理人
主权项
地址