| 摘要 |
The present invention intends to provide a power semiconductor device using a high-temperature lead-free solder material, the high-temperature lead-free solder material having the heat resistant property at 280° C. or more, and the bondability at 400° C. or less, and excellent in the suppliabilty and wettability of solder, and in the high-temperature storage reliability and the temperature cycle reliability. In the power semiconductor device according to the present invention, a semiconductor element and a metal electrode member were bonded each other by a high-temperature solder material comprising Sn, Sb, Ag, and Cu as the main constitutive elements and the rest of other unavoidable impurity elements wherein the high-temperature solder material comprises 42 wt %≦̸Sb/(Sn+Sb)≦̸48 wt %, 5 wt %≦̸Ag<20 wt %, 3 wt %≦̸Cu<10 wt %, and Ag+Cu≦̸25 wt %. |
