MEMORY SEMICONDUCTOR DEVICE AND METHODS OF FABRICATING AND OPERATING THE SAME

摘要

PURPOSE: A memory semiconductor device, a manufacturing method thereof, and an operation method thereof are provided to improve the degree of integration by arranging word lines in a three dimension. CONSTITUTION: A ground selection structure and a string selection structure are separated from each other. A memory structure comprises sequentially laminated plurality of word lines. The memory structure is arranged between the ground and the string selection structure. A semiconductor pattern(65) covers the upper side and sidewall of the memory structure. The semiconductor pattern is connected to the ground and the string selection structure and crosses the word lines.