METAL ORGANIC PRECURSOR FOR DEPOSITION OF SILICON CONTAINING THIN FILM

摘要

PURPOSE: A metal organic precursor for the deposition of a silicon containing thin film is provided to reduce the cost for a semiconductor fabrication by excluding the necessity of plasma or catalysis in a silicon oxide layer under 400°C. CONSTITUTION: A silicon precursor is easily applied to an ADL(Atomic Layer Deposition) or PCD(Plasma Chemical Deposition) by using high-density plasma under low-temperature environment. Through the silicon precursor, the necessity of plasma is minimized in the fabrication of a thin film. The silicon precursor is easily applied to a substrate of a large rectangular shape such as a TFT(Thin Film Transistor)-LCD(Liquid Crystal Display) or large silicon substrate.