发明名称 |
PN HETEROJUNCTION DIODE CONSTRUCTED WITH NANOWIRE AND NANOPARTICLE THIN FILM AND METHOD FOR FABRICATING THE SAME |
摘要 |
PURPOSE: A PN hetero junction diode and a manufacturing method thereof are provided to improve an operating speed by joining a nano particle layer to a nano wire to be crossed. CONSTITUTION: A nano wire is formed on the upper part of a dielectric layer. A line patterned nano particle layer is formed on the upper part of the nano wire and the dielectric layer. The nano particle layer is welded with the nano wire. A first electrode and a second electrode are formed in both ends of the nano particle layer. A third electrode and a fourth electrode are formed in both ends of the nano wire.
|
申请公布号 |
KR20110010026(A) |
申请公布日期 |
2011.01.31 |
申请号 |
KR20090067526 |
申请日期 |
2009.07.23 |
申请人 |
KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION |
发明人 |
KIM, SANG SIG;CHO, KYOUNG AH;JUN, JIN HYUNG |
分类号 |
H01L29/861 |
主分类号 |
H01L29/861 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|