发明名称 PN HETEROJUNCTION DIODE CONSTRUCTED WITH NANOWIRE AND NANOPARTICLE THIN FILM AND METHOD FOR FABRICATING THE SAME
摘要 PURPOSE: A PN hetero junction diode and a manufacturing method thereof are provided to improve an operating speed by joining a nano particle layer to a nano wire to be crossed. CONSTITUTION: A nano wire is formed on the upper part of a dielectric layer. A line patterned nano particle layer is formed on the upper part of the nano wire and the dielectric layer. The nano particle layer is welded with the nano wire. A first electrode and a second electrode are formed in both ends of the nano particle layer. A third electrode and a fourth electrode are formed in both ends of the nano wire.
申请公布号 KR20110010026(A) 申请公布日期 2011.01.31
申请号 KR20090067526 申请日期 2009.07.23
申请人 KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION 发明人 KIM, SANG SIG;CHO, KYOUNG AH;JUN, JIN HYUNG
分类号 H01L29/861 主分类号 H01L29/861
代理机构 代理人
主权项
地址