SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve the total performance of a semiconductor device by improving the electrical properties of wires. CONSTITUTION: A first wire(525a) comprises a first silicon wire region and a first metal wire region. A second wire comprises a second silicon wire region and a second metal wire region. The silicon wire region(510b) is located at the same level as the first silicon wire region and has specific resistivity less than the first silicon wire region.