发明名称 BATCH CVD METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS, AND COMPUTER READABLE STORAGE MEDIUM
摘要 PURPOSE: An arrangement CVD method, an apparatus thereof, and a computer readable record medium for processing semiconductor are provided to improve the property on layer quality, throughput, and raw material gas consumption. CONSTITUTION: An exhaust system(78) comprises a discharging valve for adjusting the amount of discharge. A controller(84) controls the operation of the apparatus. The controller is configured in advance to implement the arrangement CVD method.
申请公布号 KR20110009624(A) 申请公布日期 2011.01.28
申请号 KR20100069986 申请日期 2010.07.20
申请人 TOKYO ELECTRON LIMITED 发明人 IKEUCHI TOSHIYUKI;HASEGAWA MASAYUKI;TAKAHASHI TOSHIHIKO;SUZUKI KEISUKE
分类号 H01L21/31;H01L21/205 主分类号 H01L21/31
代理机构 代理人
主权项
地址