| 摘要 |
A conductor structure for a magnetic memory is disclosed. The conductor structure includes one or more conductors (21, 23) that have a width (W1, W2) that is less than a dimension (W, L) of a memory cell 20 in a direction (DW, DL) the conductor (21, 23) crosses the memory cell 20. A thickness of the conductor (t1, t2) is preselected to reduce a cross-sectional area (A1, A2) of the conductor (21, 23) and increase a current density (J1, J2) within the conductor (21, 23). A magnetic (H1,H2) field sufficient to rotate an alterable orientation of magnetization 17 in a data layer 11 of the memory cell 20 can be generated by a reduced magnitude of a current (I1, I2) flowing in the conductor due to the increased current density (J1, J2). Alternatively, the magnitude of the current (I1, I2) can be reduced by increasing a thickness of the conductor (21, 23) to increase its area (A1, A2) and reduce its resistance to the flow of electrons and partially cladding the conductor (21, 23) to reduce a total magnetic path around the conductor (21, 23) thereby increasing the magnetic field (H1,H2). <IMAGE> |
