Component, has substrate provided with continuous opening that is realized by forming holes by deep reactive ion etching, where one of holes is located close to other hole and has depth lower than that of former hole

摘要

The component (1) has a semiconductor substrate (2) i.e. silicon plate, provided with a continuous opening (3) that includes an inclined surface (11). A transversing electrical contact (4) is provided in the opening at a level of the surface. The opening is realized by forming holes by deep reactive ion etching, where one of the holes is located close to the other hole and has depth lower than that of the former hole. The holes are overlapped with each other and separated by a partition. An electro-insulating layer (10) is adhered between a connection layer (9) and the substrate. Independent claims are also included for the following: (1) a method for manufacturing of a component (2) a components system including a component.