| 摘要 |
A semi-conductor device utilizes as semi-conductor a compound of formula MNX2 where M represents copper or silver, N is xaluminium, gallium, indium, or thallium and X is sulphur, selenium or tellarium. The device may consist of a transistor, thermoelectric or photo conductive cell, rectifier or an electroluminescent cell. By selecting particular combinations it is possible to obtain a desired energy gap value for the semi-conductor. Copper indium selenide for example may be prepared by heating the constituents in stoichiometric proportions in an evacuated silicon container to 1100 DEG C. and cooling directionally; the resulting ingot may be subjected to a zone melting process to provide a single crystal. Reference is made to the use of Cu Fe S2 as a semi-conductor, which has a similar crystal structure.
|
