| 摘要 |
PROBLEM TO BE SOLVED: To make a gate electrode, or the like, constituted of an Al-based metal less susceptible to damage by resist developer and resist stripping solution, in a thin-film transistor panel of a liquid crystal device.SOLUTION: When Al oxide films 2a and 3a are formed on the upper surface of a gate electrode 2 and gate wiring 3 consisting of an Al-based metal, the upper surface of a gate electrode 2, and gate wiring 3 is not exposed to the developer and resist stripping solution for the resist films 43a, 43b and 43c; and thereby the gate electrode 2 and gate wiring 3 can be made less susceptible to damages due to the resist developer and resist-stripping solution for the resist films 43a, 43b and 43c. |
