发明名称 |
ION IMPLANTATION DEVICE EQUIPPED WITH TWO OR MORE UNIFORMIZING LENSES, AND SELECTING METHOD OF TWO OR MORE UNIFORMIZING LENSES |
摘要 |
PROBLEM TO BE SOLVED: To irradiate an ion beam having sufficiently uniform current density distribution against a semiconductor substrate even when energy reduction of the ion beam is advanced.SOLUTION: This ion injection device includes: an accelerating and decelerating device to accelerate or decelerate a ribbon-shaped ion beam in order to irradiate the ribbon-shaped ion beam having a desired energy onto the semiconductor substrate; a first uniformizing lens and a second uniformizing lens in order to uniformly control the electric current density distribution in the longitudinal direction of the ribbon-shaped ion beam; a treatment room in which the semiconductor substrate is arranged; and a beam current meter which is arranged in the treatment room and carries out measurement of the current density distribution in the longitudinal side direction of the ribbon-shaped ion beam. Then, when a route of the ribbon-shaped ion beam is seen from a treatment room side, the second uniformizing lens, the accelerating and decelerating device, and the first uniformizing lens are arranged in this order along the route of the ion beam. |
申请公布号 |
JP2011018578(A) |
申请公布日期 |
2011.01.27 |
申请号 |
JP20090162803 |
申请日期 |
2009.07.09 |
申请人 |
NISSIN ION EQUIPMENT CO LTD |
发明人 |
CHO IKO;YAMASHITA TAKATOSHI;IKEJIRI TADASHI;IAI TETSUYA |
分类号 |
H01J37/317;H01L21/265 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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