发明名称 ION IMPLANTATION DEVICE EQUIPPED WITH TWO OR MORE UNIFORMIZING LENSES, AND SELECTING METHOD OF TWO OR MORE UNIFORMIZING LENSES
摘要 PROBLEM TO BE SOLVED: To irradiate an ion beam having sufficiently uniform current density distribution against a semiconductor substrate even when energy reduction of the ion beam is advanced.SOLUTION: This ion injection device includes: an accelerating and decelerating device to accelerate or decelerate a ribbon-shaped ion beam in order to irradiate the ribbon-shaped ion beam having a desired energy onto the semiconductor substrate; a first uniformizing lens and a second uniformizing lens in order to uniformly control the electric current density distribution in the longitudinal direction of the ribbon-shaped ion beam; a treatment room in which the semiconductor substrate is arranged; and a beam current meter which is arranged in the treatment room and carries out measurement of the current density distribution in the longitudinal side direction of the ribbon-shaped ion beam. Then, when a route of the ribbon-shaped ion beam is seen from a treatment room side, the second uniformizing lens, the accelerating and decelerating device, and the first uniformizing lens are arranged in this order along the route of the ion beam.
申请公布号 JP2011018578(A) 申请公布日期 2011.01.27
申请号 JP20090162803 申请日期 2009.07.09
申请人 NISSIN ION EQUIPMENT CO LTD 发明人 CHO IKO;YAMASHITA TAKATOSHI;IKEJIRI TADASHI;IAI TETSUYA
分类号 H01J37/317;H01L21/265 主分类号 H01J37/317
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