发明名称 |
Method for reversing tone of patterns on integrated circuit and patterning sub-lithography trenches |
摘要 |
A method for reversing the tone of a lithographic image on a substrate comprises depositing a modifiable material on a substrate; applying a photolithographic material on the modifiable material: defining a removable patterned area in the photolithopgraphic material by photolithograpic means; removing the patterned area to produce an exposed region in the modifiable material that substantially conforms to the patterned area; producing a reacted modifiable material by increasing the etch resistance of the modifable material substantially throughout the exposed region so that the etch resistance of the exposed region comprises a region that substantially conforms to the exposed region; and removing the photoresist and the modifiable material to leave the reacted modifiable material and substrate.
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申请公布号 |
US2011020753(A1) |
申请公布日期 |
2011.01.27 |
申请号 |
US20090510001 |
申请日期 |
2009.07.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CLEVENGER LAWRENCE A.;DARNON MAXIME;LISI ANTHONY D.;NITTA SATYA V. |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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