发明名称 Method for reversing tone of patterns on integrated circuit and patterning sub-lithography trenches
摘要 A method for reversing the tone of a lithographic image on a substrate comprises depositing a modifiable material on a substrate; applying a photolithographic material on the modifiable material: defining a removable patterned area in the photolithopgraphic material by photolithograpic means; removing the patterned area to produce an exposed region in the modifiable material that substantially conforms to the patterned area; producing a reacted modifiable material by increasing the etch resistance of the modifable material substantially throughout the exposed region so that the etch resistance of the exposed region comprises a region that substantially conforms to the exposed region; and removing the photoresist and the modifiable material to leave the reacted modifiable material and substrate.
申请公布号 US2011020753(A1) 申请公布日期 2011.01.27
申请号 US20090510001 申请日期 2009.07.27
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CLEVENGER LAWRENCE A.;DARNON MAXIME;LISI ANTHONY D.;NITTA SATYA V.
分类号 G03F7/20 主分类号 G03F7/20
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