METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device having a peak wavelength of PL emission of not less than 1.2 µm at a temperature of 300 K.  The method comprises: a first formation step wherein a buffer layer (120) containing GaAs is formed on a semiconductor substrate (110); a second formation step wherein a quantum dot (131) containing InAs is self-formed on the thus-formed buffer layer; and a third formation step wherein a cap layer (140) containing GaAs is so formed as to cover the thus-formed quantum dot.  The second growth temperature at which the cap layer is formed in the third formation step is lower than the first growth temperature at which the quantum dot is self-formed in the second formation step.