MULTIPLE ORIENTATION NANOWIRES WITH GATE STACK STRESSORS

摘要

An electronic device includes a conductive channel defining a crystal structure and having a length and a thickness tc; and a gate stack of thickness tg in contact with a surface of the channel. Further, the gate stack comprises a material that exerts one of a compressive or a tensile force on the contacted surface of the channel such that electrical mobility of the charge carriers (electrons or holes) along the channel length is increased due to the compressive or tensile force in dependence on alignment of the channel length relative to the crystal structure. Embodiments are given for chips with both hole and electron mobility increased in different transistors, and a method for making such a transistor or chip.