| 摘要 |
PROBLEM TO BE SOLVED: To prevent a gate contact plug and a silicon substrate from short-circuiting.SOLUTION: A semiconductor device 10 includes: a semiconductor substrate 11; a silicon pillar 14B having a side surface perpendicular to the main surface of the semiconductor substrate 11; a gate dielectric film 15B that covers the side surface of the silicon pillar 14B; a gate electrode 16 that has an inner-circumference side surface 16a and an outer-circumference side surface 16b which are perpendicular to the main surface of the semiconductor substrate 11, and covers the side surface of the silicon pillar 14B such that the inner-circumference side surface 16a and the side surface of the silicon pillar 14B face each other via the gate dielectric film 15B; a gate-electrode protective film 17 that covers at least a part of the outer-circumference side surface 16b of the gate electrode 16; an interlayer dielectric film 30 provided above the gate electrode 16 and the gate-electrode protective film 17; and a gate contact plug GC that is embedded in a contact hole provided on the interlayer dielectric film 30 and is in contact with the gate electrode 16 and the gate-electrode protective film 17. |
