发明名称 METHOD OF MANUFACTURING INTEGRATED CIRCUIT STRUCTURE HAVING PIN DIODE
摘要 PROBLEM TO BE SOLVED: To provide an integrated circuit structure having a pin diode which has a simple design and high sensitivity and is suitable for use at radio frequencies.SOLUTION: A method of manufacturing the integrated circuit structure includes a process of forming a shape, including at least one step which is adjoined by a material 82 to be protected; a process of forming a protective layer which covers the step, a process of forming a spacer element layer after the protective layer is formed; a process of anisotropically etching the spacer element layer; a process of forming at least one spacer element at the step; a process of thinning or completely removing the protective layer in regions which are not covered by the spacer element with at least one remaining region 150 of the protective layer being left along the material 82 to be protected; a process of forming an effective layer, after the protective layer is thinned or removed; a process of patterning the effective layer, while removing the spacer element so as to protect the material 82 to be protected with the remaining region 150.
申请公布号 JP2011018920(A) 申请公布日期 2011.01.27
申请号 JP20100193888 申请日期 2010.08.31
申请人 INFINEON TECHNOLOGIES AG 发明人 LANGGUTH GERNOT;MUELLER KARLHEINZ;WILLE HOLGER
分类号 H01L31/10;H01L27/06;H01L27/146;H01L31/105 主分类号 H01L31/10
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